Journal of Nanomedicine & Nanotechnology

Investigation of the effect of adding As on the optical properties of dilute nitride GaPN alloys with rapid thermal annealing effect

7^th World Nano Conference

June 20-21, 2016 Cape Town, South Africa

H Albalawi, V Orsi, Y Gobato, H Vinicius, M Peron, D Taylor, S Almosni, C Cornet and M Henini

University of Nottingham, UK
Princess Norah bint Abdul-Rahman University, Saudi Arabia
Universidade Federal de São Carlos, Brazil
Université européenne de Bretagne, France

Posters & Accepted Abstracts: J Nanomed Nanotechnol

Abstract:

Dilute Gallium Arsenide Phosphide Nitride, GaAsPN, alloys grown on GaP substrates have recently received significant attention due to their unique optical properties and potential applications in optoelectronic integrated devices. It has been reported that with increasing N composition, the optical efficiency deteriorates while the band gap energy of the alloy decreases. In this work, we will report the optical properties of as-grown and heat treated dilute nitride GaAsxPyN1-x-y samples having different x and y concentrations using photoluminescence (PL). Annealing GaAsPN alloys at 800Ë?C for five minutes using rapid thermal annealing (RTA) leads to significant increase of the PL intensity and a shift of the PL peak to higher energies. An anomalous temperature dependence of the PL spectrum has been observed in most GaAsPN/GaP hetero structures studied in this work. The PL peak energy as a function of temperature exhibits an inverted S-shape. This unusual behaviour is explained by strong localization of carriers at low temperatures that could be induced by the presence of nitrogen. The impact of As incorporation and thickness of GaAsxPyN0.020 on the localization energy has been investigated. We found that increasing the thickness of the GaAsPN epilayer significantly results in diminution of the optical properties.

Biography :

Email: ezxhma@nottingham.ac.uk