Journal of Nanomedicine & Nanotechnology

InP MOS capacitor and E-mode N-channel FET with ALD nano Al₂O₃ based high-k dielectric

7^th World Nano Conference

June 20-21, 2016 Cape Town, South Africa

Chih-Feng Yen, Ming-Kwei Lee and Min-Yen Yeh

National Kaohsiung Marine University, Taiwan
Chung Yuan Christian University, Taiwan

Posters & Accepted Abstracts: J Nanomed Nanotechnol

Abstract:

The electrical characteristics of atomic layer deposited (ALD) Al2O3/TiO2/Al2O3 on (NH4)2S treated InP MOS capacitor and related MOSFET were studied. The electrical characteristics were improved from the reduction of native oxides and sulfur passivation on InP by (NH4)2S treatment. The high bandgap Al2O3 on TiO2 can reduce the thermionic emission, and the Al2O3 under TiO2 improves the interface state density by self-cleaning. The high dielectric constant TiO2 is used to lower the equivalent oxide thickness. The leakage currents can reach 2.3�10-8 and 2.2�10-7 A/cm2 at ±2 MV/cm, respectively. The lowest interface state density is 4.6�1011 cm- 2eV-1 with a low frequency dispersion of 15%. The fabricated enhancement-mode n-channel sulfur-treated InP MOSFET exhibits good electrical characteristics with a maximum transconductance of 146 mS/mm and electron channel mobility of 1760 cm2/V�s.

Biography :

Email: cfyen@webmail.nkmu.edu.tw