Serhii Shafraniuk
Northwestern University, USA
Posters & Accepted Abstracts: J Nanomed Nanotechnol
Using the local thermoelectric cooling on nanoscale enables exploiting of the low-temperature phenomena at ambient temperatures with no needs in bulky and expensive refrigerating equipment, thereby opening new horizonts for many approaches and methodologies. The key idea is to apply an energy-efficient cooling to individual transistors or quantum dots with a pin-point precision, concentrating on small limited areas, thereby dropping the necessity to refrigerate bulky devices. We conduct the experimental study and theoretical modelling of thermoelectric cooling observed in the Carbon Nanotube (CNT), whose opposite ends contain the charge carriers of opposite sign, either electrons or holes, created by doping with using of the local gate electrodes. Finite source-drain electric bias voltage V causes change of the local effective electron temperature Te at the middle of CNT, owing to the Peltier effect, whilst the magnitude is deduced from the change in the position and width of spectral singularities, which is manifested in the experimental curves of the source-drain electric conductance. We find that using the electrode doping, one achieves a sharp rise of both, the electric conductivity and Seebeck coefficient, while the thermal conductivity tumbles. Such the effect of thermal transistor improves the figure of merit of the thermoelectric transducing circuits. Depending on the sign of V, the thermoelectric effect causes either cooling or heating of the electron subsystem inside CNT, with the Te change ~70 K. The value of deduced figure of merit is ZT~10 and the cooling power density is ~ 80 kW/cm2.