Journal of Nanomedicine & Nanotechnology

Toshio Hayashi

Publications

• Research Article
  Recent Development of Si Chemical Dry Etching Technologies
  Author(s): Toshio HayashiToshio Hayashi
  
  Chemical dry etching in wafer processing was innovated and developed in 1976 using CF4/O2 downflow plasma for poly-Si etching. Thereafter, many researchers developed and reported various chemical dry etching methods. Advanced Si chemical dry etching technology was developed in 2010, using N2 downflow plasma and NF3 flowing to the downflow plasma area. The etchant production mechanism for this technology was explained by us. In these technologies, the plasma source is necessary to produce the etchants (F for Si etching and HF+NH3 for SiO2 etching). Recently, a novel Si chemical dry etching technology was innovated and developed by us without plasma source, in which F atoms generated in F2+NOF+FNO reaction are used for Si etching in the pressure range of 100 to 1000 Pa. The etch rate at room temperature is more than 5000 nm/min, and is dependent on the flow rate and o.. View More»
  DOI: 10.4172/2157-7439.S15-001

  Abstract PDF