Journal of Nanomedicine & Nanotechnology

Hüseyin Tecimer

Publications

• Research Article
  A Comparative Study on Electrical Characteristics of Au/N-Si Schottky Diodes, with and Without Bi-Doped PVA Interfacial Layer in Dark and Under Illumination at Room Temperature
  Author(s): Sahar Alialy, Hüseyin Tecimer, Habibe Uslu and Semsettin AltindalSahar Alialy, Hüseyin Tecimer, Habibe Uslu and Semsettin Altindal
  
  In order to see the effect of Bi-doped PVA interfacial layer on electrical characteristics, both Au/n-Si (MS) and Au/Bidoped PVA/n-Si (MPS) type Schottky barrier diodes (SBDs) were fabricated, and their main electrical parameters were investigated using current-voltage (I-V) and capacitance-voltage (C-V) measurements, in dark and under illumination at room temperature. Forward bias semi-logarithmic I-V plots of these SBDs show two distinct linear regions, with different slopes in the low and intermediate voltage region. Such behavior in I-V plots was explained by two parallel diodes model. Experimental results show that the ideality factor (n), barrier height (φb), series and shunt resistances (Rs and Rsh), and the density of interface states/traps (Nss) are strong functions of illumination level and applied bias voltage. The Rs values were determined from the I-V characteristics,.. View More»
  DOI: 10.4172/2157-7439.1000167

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